Transferred-electron photoemission to 1.4 μm

Abstract
We report here reflection‐ and transmission‐mode photoemission out to 1.4 μm from a biased field‐assisted p‐InGaAsP grown on p‐InP photocathode. The quantum yield in transmission is ∼0.1% from 0.9 to 1.4 μm. Dark current due to impact ionization by injected holes in the depletion region is observed.