Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism

Abstract

GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing. p‐ and n‐type crystals were produced. GaAs crystals were found to have three morphologies: a twinned ribbon with a 〈112〉 growth direction and {111}, {110}, and {113} lateral faces; a single‐crystal hexagonal needle with a 〈111〉 growth direction and {110} lateral faces; and a newly found habit, a single‐crystal blade which grows in an 〈001〉 direction with {110} lateral faces. The largest GaAs blades were about 8×0.3 ×0.010 mm and grew at a rate of about 1 mm/h. The twinned ribbon and the 〈001〉, {110} morphologies were found in GaP.