Voltage dependence of the magnetic state in magnetic tunnel junctions
- 1 May 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (9), 5221-5223
- https://doi.org/10.1063/1.373301
Abstract
In magnetic tunnel junctions(MTJ) we study how the magnetic state depends on the tunnel current. We present data on the I–V dependence of the MTJ in strong biasing fields up to 4 V, and propose that the observed hysteresis may have its origin in spin-polarized electrons influencing locally the magnetic state of the system.Keywords
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