The effect of elastic strain on energy band gap and lattice parameter in III-V compounds
- 1 November 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (11), 5523-5529
- https://doi.org/10.1063/1.324472
Abstract
The elastic and misfit strain in vapor‐grown InGaP/GaAs crystals was determined by measuring the lattice parameter of the InGaP before and after removal of the GaAs substrate. The energy‐band‐gap shift as a function of strain was measured in a similar manner using photoluminescence. Up to 70% of the misfit strain was found to be accommodated elastically. The critical resolved shear stress for dislocation motion was found to be ∼2×109 dyn/cm2. The rather low band‐gap shift with applied stress of ∼3×10−9 meV/dyn cm−2 was attributed to the Poisson effect. Photoluminescence was found to be a very accurate means to measure composition (and therefore lattice parameter), and empirical expressions were determined for the variation of photoluminescence wavelength with composition, lattice parameter, and energy band gap.Keywords
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