Polariton theory of resonant electronic Raman scattering on neutral donor levels in semiconductors with a direct band gap
- 1 January 1980
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 41 (9), 1067-1074
- https://doi.org/10.1051/jphys:019800041090106700
Abstract
The theory is presented for the Raman scattering on bound electrons of neutral donors in the semiconductors with a direct band gap at the incident photon frequency in the resonance with the exciton. The cross-section of the polariton scattering with the transition of the donor electron from the ground state to the first excited state is calculatedKeywords
This publication has 12 references indexed in Scilit:
- Electronic Raman scattering and infrared absorption by arsenic acceptors in ZnTeSolid State Communications, 1975
- Resonant Light Scattering by Single-Particle Electronic Excitations inPhysical Review Letters, 1971
- Light Scattering by Itinerant Spin-Density Excitation in MetalsPhysical Review B, 1969
- Polarization and Intensity of Raman Scattering from Plasmons and Phonons in Gallium ArsenidePhysical Review Letters, 1967
- Raman Scattering by Coupled Plasmon-Longitudinal-Optical-Phonon Modes in Zincblende-Type CrystalsPhysical Review B, 1967
- Raman Scattering from Donor and Acceptor Impurities in SiliconPhysical Review Letters, 1967
- Electronic Raman Scattering by Acceptors in GaPPhysical Review Letters, 1966
- Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAsPhysical Review Letters, 1966
- Thomson and Raman Scattering by Mobile Electrons in CrystalsPhysical Review Letters, 1966
- Theory of the Contribution of Excitons to the Complex Dielectric Constant of CrystalsPhysical Review B, 1958