X-ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces
- 23 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (4), 365-367
- https://doi.org/10.1063/1.100970
Abstract
The effect of an ammonium sulfide treatment on the GaAs (100) surface has been investigated by x-ray photoelectron spectroscopy. The treatment produces a slight Ga enrichment on the surface and leaves roughly 0.6 of a monolayer of sulfide which inhibits initial oxidation of the surface. The sulfide is not lost as the surface becomes oxidized but appears to remain near the GaAs/oxide interface. Furthermore, in the oxidized layer, As oxide is preferentially drawn to the surface relative to Ga oxide.Keywords
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