Four-point probe resistivity measurements of dicing damage in (100) and (111) single crystal silicon wafers
- 1 November 1990
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 25 (11), 4892-4897
- https://doi.org/10.1007/bf01129958
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Correlation of dynamic friction and the dislocation etch pit density surrounding annealed scratches in (1 1 1) p-type siliconJournal of Materials Science, 1988
- Resistivity of linear scratches in doped (100) n-type single-crystal siliconJournal of Applied Physics, 1988
- Influence of fluids on the abrasion of silicon by diamondWear, 1982
- Effect of Lubricant Environments on Saw Damage in Si WafersJournal of the Electrochemical Society, 1980
- ID-Diamond-Sawing Damage to Germanium and SiliconJournal of the Electrochemical Society, 1969
- Influence of damaged surface layer on resistivity and mobility of thin semiconductor sheetsSolid-State Electronics, 1966
- Plastic Deformation of Germanium and SiliconPhysical Review B, 1952