Characteristics of Luminescence from InSb Magneto-Infrared-Emitting Diode
- 1 November 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (11A), L821-823
- https://doi.org/10.1143/jjap.23.l821
Abstract
Utilizing the magnetoconcentration effect due to the Lorentz force in an electron-hole plasma of intrinsic InSb, we have first succeeded in generating an infrared emission having wavelength corresponding to the energy gap with intensity exceeding ∼30 mW/cm2at room temperature with fairly high efficiency. The principle is quite different from usual LED utilizingp-njunction, and so the magneto-diode is especially useful for generation of light with wavelength longer than ∼2 µm at room temperature.Keywords
This publication has 3 references indexed in Scilit:
- Light amplification through the magnetoelectric-photo effect in InSbPhysics Letters A, 1984
- Infrared emission from n-InSb under crossed electric and magnetic fieldsPhysics Letters A, 1981
- Magnetoconcentration and related galvanomagnetic effects in non-intrinsic semiconductorsJournal of Physics C: Solid State Physics, 1980