Phonon interactions in the tail states of-Si:H
- 15 November 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (10), 5923-5929
- https://doi.org/10.1103/physrevb.28.5923
Abstract
Many experimental data on the 1.4-eV photoluminescence of -Si:H have been interpreted by the assumption of a Stokes shift of up to 0.5 eV. We show that the evidence for a Stokes shift may be satisfactorily explained by a distribution of zero-phonon energies only. This suggests that the radiative states may be rigid and so that there is no evidence for a significant disorder-induced electron-phonon interaction in the tail states of amorphous silicon.
Keywords
This publication has 27 references indexed in Scilit:
- Distribution of recombination lifetimes in amorphous siliconSolid State Communications, 1982
- A direct determination of the lifetime distribution of the 1.4 eV luminescence of a-Si:HJournal of Physics C: Solid State Physics, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- States in the gap in non-crystalline semiconductorsJournal of Physics C: Solid State Physics, 1980
- Optical absorption by GAP states in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980
- Photoluminescence in sputtered amorphous Si:H alloysJournal of Non-Crystalline Solids, 1980
- Recombination in plasma-deposited amorphous Si:H. Luminescence decayPhysical Review B, 1979
- Photoluminescence and lifetime studies on plasma discharge a-SiJournal of Non-Crystalline Solids, 1979
- Optically detected electron spin resonance in amorphous siliconSolid State Communications, 1978
- Phonon interactions in the luminescence of amorphous siliconPhilosophical Magazine Part B, 1978