Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD)
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 839-842
- https://doi.org/10.1016/0022-3093(87)90201-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979