Further results on the aging of silicon Schottky diodes: Influence of the metal
- 1 July 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7), 5050-5051
- https://doi.org/10.1063/1.325606
Abstract
In a recently published paper we have emphasized the role of oxygen on the aging process arising in chemically etched silicon Schottky diodes. Complementary results which more accurately show the influence of the behavior of the metal electrodes with respect to oxygen are presented. A qualitative explanation of these observations is proposed.Keywords
This publication has 2 references indexed in Scilit:
- Role of oxygen in the mechanism of formation of Schottky diodesJournal of Applied Physics, 1978
- Interface studies of metal-semiconductor contacts by means of SIMS, nuclear reaction and RBSNuclear Instruments and Methods, 1978