Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy

Abstract

In-doped ZnSe layers have been grown for the first time by low-pressure vapor-phase epitaxy using metallic Zn, Se and In as source materials on GaAs(100) substrates. The carrier concentration increases significantly with increasing In cell temperature, and is controlled in the range of 10¹⁶∼10¹⁸ cm^-3. The near-band-gap emission also increases with In cell temperature. The highest carrier concentration achieved is 1.3×10¹⁸ cm^-3, and even the most highly doped sample shows a photoluminescence spectrum dominated by the near-band-gap emission.