Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy
- 15 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (2), 169-171
- https://doi.org/10.1063/1.95672
Abstract
The photoluminescence linewidth (4 K) of Al0.48In0.52As was reduced to 15 meV and its dependence was determined to be a strong function of the substrate temperature and As4 overpressure. Raman spectroscopy correlates the luminescence broadening to the crystallinity of the AlInAs. The ratio of the allowed longitudinal optical phonon to forbidden transverse optical phonon Raman peak heights is 10:1.Keywords
This publication has 7 references indexed in Scilit:
- Raman Scattering in Alloy Semiconductors: "Spatial Correlation" ModelPhysical Review Letters, 1984
- Direct energy gap of Al1−xInxAs lattice matched to InPApplied Physics Letters, 1984
- Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wellsJournal of Electronic Materials, 1983
- Optical properties of GaInAs/AlInAs single quantum wellsApplied Physics Letters, 1983
- Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 μmElectronics Letters, 1983
- Extrinsic layer at AlxGa1−xAs-GaAs interfacesApplied Physics Letters, 1982
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981