Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED's

1 April 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (4), 365-371
https://doi.org/10.1109/T-ED.1981.20347

Abstract

The radiance/current relationship for small-area surface emitting LED's has been found to saturate at high current densities between 30 and 1000 kA/cm2in the various GaAlAs and GaInAsP devices investigated. An important saturation mechanism is found to be due to superluminescence in the plane of the active layer. Auger recombination and carrier leakage from the active region are generally of secondary importance in causing the saturation.

Keywords

ELECTROLUMINESCENCE
PREDICTIVE MODELS
GALLIUM ARSENIDE
LENSES
LIGHT EMITTING DIODE
CURRENT DENSITY
TEMPERATURE

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