Reverse modeling of E/D logic submicrometer MODFETs and prediction of maximum extrinsic MODFET current gain cutoff frequency
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (4), 920-934
- https://doi.org/10.1109/16.52425
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Capacitance-voltage analysis and current modeling of pulse-doped MODFETsIEEE Transactions on Electron Devices, 1989
- The influence of device physical parameters of HEMT large-signal characteristicsIEEE Transactions on Microwave Theory and Techniques, 1988
- Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistorIEEE Transactions on Electron Devices, 1988
- Two-dimensional numerical model for the high electron mobility transistorSolid-State Electronics, 1987
- Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structuresIEEE Transactions on Electron Devices, 1987
- Scaling properties of high electron mobility transistorsIEEE Transactions on Electron Devices, 1986
- Monte Carlo study of electronic transport in As/GaAs single-well heterostructuresPhysical Review B, 1986
- Analysis of high electron mobility transistors based on a two-dimensional numerical modelIEEE Electron Device Letters, 1984
- Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1983
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969