Monolithic integration of 1.5 μm optical preamplifier and PIN photodetector with a gain of 20 dB and a bandwidth of 35 GHz

Abstract

The monolithic integration of a semiconductor laser optical preamplifier and an edge-coupled PIN photodiode has been demonstrated for the first time. Although the fabrication involved is relatively simple, a maximum gain (excluding input coupling loss) of 20 dB and a 3 dB bandwidth of 35 GHz has bean measured for this device.