THz MMICs based on InP HBT Technology
- 1 May 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1126-1129
- https://doi.org/10.1109/mwsym.2010.5517225
Abstract
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256 nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high breakdown voltage (BVCBo = 4V) and integrated 10-μm thick layer of BCB dielectric supporting both low-loss THz microstrip lines for LNA, PA, and VCO tuning networks, and high-density thin-film interconnects for compact digital and analog blocks. TMIC low noise and driver amplifiers, fixed and voltage controlled oscillators, dynamic frequency dividers, and double-balanced Gilbert cell mixers have been designed and fabricated. These results demonstrate the capability of 256 nm InP DHBT technology to enable sophisticated single-chip heterodyne receivers and exciters for operation at THz frequencies.Keywords
This publication has 6 references indexed in Scilit:
- 300 GHz six-stage differential-mode amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Fabrication of InP HEMT devices with extremely high FmaxPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable TechnologiesProceedings of the IEEE, 2008
- Compact InP HBT Power Amplifiers Using Integrated Thick BCB DielectricsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Towards Terahertz MMIC Amplifiers: Present Status and TrendsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Deep submicron InP DHBT technology with electroplated emitter and base contactsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004