X-band self-aligned gate enhancement-mode InP MISFET's

Abstract

Self-aligned gate enhancement-mode InP/SiO2MISFET's with ∼0.8-µm channel length were successfully fabricated on an Fe-doped semi-insulating substrate. The fabricated MISFET's exhibited very high transconductance, as high as 200 mS/mm, and goodX-band operation, especially marked high-power-output characteristics. The minimum noise figure at 4 GHz was 1.87 dB with 10.0-dB associated gain. 1.17 W/mm and 1.0 W/mm power outputs were obtained at 6.5 and 11.5 GHz, respectively. 43.5-percent maximum power-added efficiency was attained at 6.5 GHz.