Abstract
The mechanism of formation of silica films produced by the thermal decomposition of ethyltriethoxysilane has been studied. It is proposed that the thermal decomposition of the silane results in the production of complex silicon‐alkyl radicals which become chemisorbed on a hot surface and suffer further decomposition in order to form a silica film. Recombination of these radicals on a cold surface leads to the formation of organic polymers of silicon. A new technique for the production of thick silica films is also presented.