New approach to the atomic layer epitaxy of GaAs using a fast gas stream
- 17 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (16), 1509-1511
- https://doi.org/10.1063/1.99941
Abstract
A new growth method has been developed for the atomic layer epitaxy of GaAs. The gas system was based on a conventional metalorganic vapor phase epitaxial system but the decomposition of methylgallium was suppressed in the stagnant layer by using a fast pulsed gas stream from a jet nozzle. The method enabled us to grow high purity epitaxial layers with a clear self-limiting mechanism even at 560 °C. The variations in the growth rate with respect to various growth parameters were explained by the rate equations based on the selective adsorption of methylgallium on surface As atoms. The decomposition rate of methylgallium on the surface had an activation energy of 42 kcal/mole from 440 to 560 °C.Keywords
This publication has 8 references indexed in Scilit:
- Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxyApplied Physics Letters, 1987
- GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxyApplied Physics Letters, 1987
- Gallium arsenide thin films by low-temperature photochemical processesJournal of Vacuum Science & Technology A, 1987
- Kinetic processes in atomic-layer epitaxy of GaAs and AlAs using a pulsed vapor-phase methodJournal of Vacuum Science & Technology B, 1987
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVDJournal of Crystal Growth, 1986
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- THE PYROLYSIS OF TRIMETHYL GALLIUMCanadian Journal of Chemistry, 1963