Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A), L302-304
- https://doi.org/10.1143/jjap.23.l302
Abstract
A new vertical magnetic field applied LEC apparatus has been developed for volume production of large size GaAs single crystals. The apparatus consists of a superconducting magnet with compact refrigerator systems and an in-house modified high pressure puller. Temperature fluctuation through the molten GaAs was suppressed to less than 0.3°C by the application of more than 1000 Oe. The vertical magnetic field effects on GaAs melt are described in comparison with the results of a transverse magnetic field.Keywords
This publication has 4 references indexed in Scilit:
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