Intrinsic Piezobirefringence in GaSb, InAs, and InSb

Abstract

The intrinsic piezobirefringence in InAs, GaSb, and InSb has been measured at room temperature with uniaxial stresses along the [001] and [111] directions. The experimental results were fitted with a theoretical expression involving two adjustable parameters. From one of the parameters, the shear deformation potentials $b$ and $d$ of the valence band edge were obtained. The results are compared with those obtained by other methods. The long-wavelength piezobirefringence is discussed in the light of Phillips's theory of the dielectric constant. A quadratic dependence of the piezobirefringence on stress was observed in the vicinity of the absorption edge, especially for GaSb. This nonlinear effect can be theoretically interpreted without any adjustable parameters. The possibilities of obtaining phase matching in second-harmonic generation with InAs and GaSb by uniaxial stress using a ${\mathrm{CO}}_2$ laser are also discussed.