Electrical properties of amorphous high-/spl kappa/ HfTaTiO gate dielectric with dielectric constants of 40-60
- 2 May 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (5), 298-300
- https://doi.org/10.1109/led.2005.846893
Abstract
High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Ta, and Ti with a thickness of /spl sim/10 /spl Aring/ each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature of the laminated dielectric stack is increased up to 900/spl deg/C. The excellent electrical properties of HfTaTiO dielectrics with TaN electrode have been demonstrated, including low interface state density (D/sub it/), leakage current, and trap density. The effect of binary and ternary laminated metals on the enhancement of dielectric constant and electrical properties has been studied.Keywords
This publication has 11 references indexed in Scilit:
- Evidence and Understanding of ALD$hbox HfO_2hbox --hbox Al_2hbox O_3$Laminate MIM Capacitors Outperforming Sandwich CounterpartsIEEE Electron Device Letters, 2004
- Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody–Lorentz parameterized modelApplied Physics Letters, 2004
- Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in$hbox TaN/SiO_2$Gate StackIEEE Electron Device Letters, 2004
- A study of mixtures of HfO2 and TiO2 as high-k gate dielectricsMicroelectronic Engineering, 2004
- Laminated metal gate electrode with tunable work function for advanced CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Investigation of TiO2-doped HfO2 thin films deposited by photo-CVDThin Solid Films, 2003
- Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on SiSolid-State Electronics, 2002
- A novel approach for identifying and synthesizing highdielectric materialsJournal of Materials Research, 1999
- Characterization of ultra-thin oxides using electrical C-V and I-V measurementsPublished by AIP Publishing ,1998
- Thermochemical Data of Pure SubstancesPublished by Wiley ,1995