New Instability in Molecular Beam Epitaxy
- 2 January 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (1), 134-137
- https://doi.org/10.1103/physrevlett.74.134
Abstract
A new, step bunching instability in the growth of stepped surfaces by molecular beam epitaxy MBE is described. It is produced by an elastic mechanism, and is different from the instability discovered by Asaro and Tiller and by Grinfeld. Unlike the Asaro-Tiller-Grinfeld instability (which is expected to occur only under very low fluxes), the present instability can occur or not, according to the nature of the substrate. This instability is likely to be offset by step barrier asymmetry in many materials.Keywords
This publication has 13 references indexed in Scilit:
- The stress driven instability in elastic crystals: Mathematical models and physical manifestationsJournal of Nonlinear Science, 1993
- Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxyJournal of Applied Physics, 1993
- Amplitude expansion for the Grinfeld instability due to uniaxial stress at a solid surfaceJournal de Physique I, 1993
- Morphological instability in epitaxially strained dislocation-free solid filmsPhysical Review Letters, 1991
- The elastostatics of atomic steps on crystal surfaces: I. A pair of steps of opposite sign enclosing a lower terraceSurface Science, 1991
- Continuum models of crystal growth from atomic beams with and without desorptionJournal de Physique I, 1991
- On the stability of surfaces of stressed solidsActa Metallurgica, 1989
- Elastic interaction of two atoms adsorbed on a solid surfaceSurface Science, 1977
- Interface morphology development during stress corrosion cracking: Part I. Via surface diffusionMetallurgical Transactions, 1972
- Step Motion on Crystal Surfaces. IIJournal of Applied Physics, 1969