UHV-REM Study of Changes in the Step Structures on Clean (100) Silicon Surfaces by Annealing
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4A), L293
- https://doi.org/10.1143/jjap.26.l293
Abstract
Changes in the step structures on clean (100) silicon surfaces during annealing were observed by in situ ultra high vacuum reflection electron microscopy. After quenching from 1200°C, at about 800°C almost the entire surface was covered with periodic arrays of 2×1 and 1×2 reconstructed domains bounded by monolayer high steps. One type of reconstructed domain, with dimers parallel to the average tilt axis [011̄], grew over the other above 900°C. The terrace size became as large as a few microns. However, a small number of periodic arrays of reconstructed domains remained stable at above 1000°C even under apparent surface evaporation.Keywords
This publication has 7 references indexed in Scilit:
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Image contrast of dislocations and atomic steps on (111) silicon surface in reflection electron microscopySurface Science, 1981
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980
- Techniques for routine UHV in situ electron microscopy of growth processes of epitaxial thin filmsJournal of Physics E: Scientific Instruments, 1978