Niobium silicide formation induced by Ar-ion bombardment
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3), 222-224
- https://doi.org/10.1063/1.91102
Abstract
The effect of Ar‐ion bombardment on evaporated–Nb‐on‐Si systems has been investigated with He backscattering and x‐ray‐diffraction measurements. High‐dose bombardment with energetic Ar ions was found to induce intermixing between Nb and Si in the form of NbSi2. This effect has strong dependence on temperature during bombardment, although it cannot be explained as enhanced diffusion due to radiation damage or ion‐beam heating.Keywords
This publication has 3 references indexed in Scilit:
- Ion-beam-induced silicide formationApplied Physics Letters, 1979
- Alloying of thin palladium films with single crystal and amorphous siliconPhysica Status Solidi (a), 1973
- Ion bombardment and implantation and their application to thin filmsThin Solid Films, 1972