LASER EMISSION FROM n-TYPE GaAs EXCITED BY FAST ELECTRONS
- 1 March 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 6 (5), 91-93
- https://doi.org/10.1063/1.1754181
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964
- ELECTRON-BEAM-PUMPED GaAs LASERApplied Physics Letters, 1964
- Effet laser dans l'arseniure d'indium par bombardement electroniqueSolid State Communications, 1964
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962