Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells
- 15 November 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (10), 5921-5926
- https://doi.org/10.1063/1.358481
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsineJournal of Crystal Growth, 1992
- Novel strained InP/InAsxP1−x quantum-well modulation-doped heterostructuresApplied Physics Letters, 1992
- Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum wellJournal of Applied Physics, 1991
- Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor-phase epitaxyJournal of Applied Physics, 1991
- InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasersApplied Physics Letters, 1991
- Temperature dependence of optical absorption induced by exciton resonances in GaAs/GaAlAs multi-quantum-well structuresSolid State Communications, 1990
- Photovoltaic spectroscopy of InGaAs/GaAs superlatticesApplied Physics Letters, 1988
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988
- Temperature dependence of the quantized states in asuperlatticePhysical Review B, 1988
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984