Influence of substrate defects on the structure of epitaxial GaAs grown by MOCVD
- 2 April 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 88 (2), 221-228
- https://doi.org/10.1016/0022-0248(88)90279-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Crystallographic Defects in (001) GaAs Epitaxial Layers Grown by MOCVDJournal of the Electrochemical Society, 1987
- Selective etching and photoetching of GaAs in CrO3-HF aqueous solutions: III. Interpretation of defect-related etch figuresJournal of Crystal Growth, 1986
- Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF SolutionsJournal of the Electrochemical Society, 1986
- Revealing of defects in InP by shallow (submicron) photoetchingJournal of Applied Physics, 1985
- The effect of crystal defects on device performance and reliabilityJournal of Crystal Growth, 1984
- Substrate effects on the threshold voltage of GaAs field-effect transistorsApplied Physics Letters, 1984
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutionsJournal of Crystal Growth, 1983
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAsJapanese Journal of Applied Physics, 1983
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974