10 Gbit/s AND gate using dual-gate GaAs MESFET

Abstract

Using a commercial dual-gate GaAs MESFET transistor mounted in a microstrip circuit, an AND gate has been built. With the 100 ps (FWHM) wide test pulses available, a speed of 10 Gbit/s NRZ and a pulse suppression of at least 14 dB was obtained.