Characterization of phase noise in semiconductor lasers
- 15 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (8), 695-696
- https://doi.org/10.1063/1.93654
Abstract
Phase noise in semiconductor lasers has been investigated by many authors in the range of low frequencies (<1 MHz). In this letter we present for the first time phase noise measurements extended up to frequencies greater than 1 GHz. Experimental results showing the power spectral density Sφ̇(ω) of the instantaneous frequency φ̇(t) and the variance σ2[Δτφ(t)] of the phase shift Δτφ(t) are presented. The peculiar behavior of Sφ̇(ω), which presents a sharp peak at the same frequency of the amplitude noise peak, can account for the excessive broadening of the linewidth of single-mode injection lasers.Keywords
This publication has 7 references indexed in Scilit:
- Observation of linewidth broadening in (GaAl)As diode lasers due to electron number fluctuationsApplied Physics Letters, 1982
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Phase noise of single-mode diode lasers in interferometer systemsApplied Physics Letters, 1981
- Fundamental line broadening of single-mode (GaAl)As diode lasersApplied Physics Letters, 1981
- Single-mode diode laser phase noiseApplied Physics Letters, 1981
- Preliminary measurements of laser short-term frequency fluctuationsIEEE Journal of Quantum Electronics, 1967
- Some aspects of the theory and measurement of frequency fluctuations in frequency standardsProceedings of the IEEE, 1966