The preparation of high purity gallium arsenide by vapour phase epitaxial growth
- 1 February 1965
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (2), 178-180
- https://doi.org/10.1016/0038-1101(65)90050-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963