Electron spin resonance in argon-ion-implanted silicon
- 1 September 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (9), 4243
- https://doi.org/10.1063/1.1662935
Abstract
A new paramagnetic center with g = 2.0029 is observed, in both n- and p-type silicon after they are heavily implanted (higher than 1017 ions/cm2) with 150-keV argon ions.Keywords
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