Hopping-conductivity changes with the concentration of compensating centers

Abstract
Electrical-conductivity changes due to variation of the concentration of compensating centers are calculated for both the nearest-neighbor hopping and the variable-range hopping regimes. Verification of the formulas obtained in the case of high compensation is made using irradiation with energetic electrons in cadmium telluride (for the nearest-neighbor hopping regime) and in semiconducting diamond (for the variable-range hopping regime).