One-dimensional transport in quantum well wire-high electron mobility transistor
- 22 December 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (25), 1738-1740
- https://doi.org/10.1063/1.97232
Abstract
A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.Keywords
This publication has 9 references indexed in Scilit:
- Lifetime broadening of a parabolic band edge of a pure semiconductor at various temperaturesSolid-State Electronics, 1985
- Hot-electron velocity characteristics at AlGaAs/GaAs heterostructuresIEEE Electron Device Letters, 1984
- Low field mobility of 2-d electron gas in modulation doped AlxGa1−xAs/GaAs layersJournal of Applied Physics, 1983
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967