Theory of fine-structure splittings for donor-bound excitons in indirect materials
- 15 March 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (6), 3945-3962
- https://doi.org/10.1103/physrevb.25.3945
Abstract
We present a theory for the fine structures in the electronic excitation spectra for excitons bound to various donors in Si and Ge. These fine structures are produced by the mixing of Hartree-Fock solutions through the interparticle interactions. We have calculated excitation energies for the low-lying electronic excited states in the Hartree-Fock approximation, and estimated the fine-structure splitting using the first-order degenerate perturbation theory. The energy separations between these states and the ground state are in good agreement with the experimental data. The fine-structure terms are found to be small relative to the separation between states from different configurations for most donors in Si and Ge, thus allowing an interpretation of the spectra in terms of a shell model.Keywords
This publication has 35 references indexed in Scilit:
- Theory ofD−states in Ge and SiPhysical Review B, 1982
- Excitation Spectra of Bound Excitons and Bound Multiexciton Complexes in-Type SiPhysical Review Letters, 1980
- Bound-exciton luminescence and absorption in phosphorus-doped germaniumJournal of Physics C: Solid State Physics, 1979
- A new model for bound multiexciton complexesSolid State Communications, 1977
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons RevisitedPhysical Review Letters, 1976
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- Principles of the Theory of SolidsPublished by Cambridge University Press (CUP) ,1972
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960