Integration of amorphous silicon field-effect-transistor is investigated. It is shown experimentally that the new inverter circuit which consists of an n-channel enhancement mode driver FET and a p-channel load FET has excellent step-like transfer characteristics. A small-signal gain of more than 10 was obtained. A nine-stage integrated ring-oscillator operated for the first time. The power delay product and the minimum propagation delay time were about 480 pJ and 110 µs, respectively, which agreed well with the analytical results. It is pointed out that power-delay product could be reduced by more than three orders of magnitude.