Semiconductor nanowires: synthesis, structure and properties
- 30 June 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 286 (1), 16-23
- https://doi.org/10.1016/s0921-5093(00)00658-4
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristicsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Growth and optical properties of nanometer-scale GaAs and InAs whiskersJournal of Applied Physics, 1995
- Polycrystalline silicon ‘‘slit nanowire’’ for possible quantum devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Oxidation of sub-50 nm Si columns for light emission studyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Quantum size microcrystals grown using organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Fundamental aspects of VLS growthJournal of Crystal Growth, 1975
- A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germaneJournal of Crystal Growth, 1971
- VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDEApplied Physics Letters, 1965
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- Vapor Phase Preparation of Gallium Phosphide CrystalsJournal of the Electrochemical Society, 1961