Photoluminescence properties of a-SiNx: H alloys
- 27 September 1985
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (3), 271-288
- https://doi.org/10.1080/13642818508240600
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Photoluminescence in hydrogenated amorphous siliconPhysical Review B, 1984
- Properties of amorphous semiconducting multilayer films and of alloysPhysical Review B, 1984
- Recombination processes in-Si: H. A study by optically detected magnetic resonancePhysical Review B, 1983
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen DopingJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Charged defect-pair luminescence in a-As2S3Journal of Physics C: Solid State Physics, 1979
- Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low TemperaturesJournal of the Electrochemical Society, 1972
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971
- Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and NitrogenJapanese Journal of Applied Physics, 1969
- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967