A Uniaxial Stress Apparatus
- 1 May 1972
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 43 (5), 749-753
- https://doi.org/10.1063/1.1685748
Abstract
A detailed description is given of the design and construction of a new type of uniaxial stress apparatus that is based on the use of a rotating cam to transmit the stress to the sample. The apparatus can be used at low temperatures and in large magnetic fields. Some preliminary data (for stress values up to ∼7.6 kilobar, the highest value yet reported for InSb) on the effect of stress on the frequency of magnetophonon oscillations in n‐InSb at 77 K are presented.Keywords
This publication has 20 references indexed in Scilit:
- Apparatus for Inducing High Uniaxial Compressive Stresses in CrystalsReview of Scientific Instruments, 1968
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968
- Piezoresistive Properties of Reduced Strontium TitanatePhysical Review B, 1966
- High-Stress Piezoresistance and Mobility in Degenerate Sb-Doped GermaniumPhysical Review B, 1965
- Piezo-Thermal Conductivity Effect in GermaniumPhysical Review B, 1962
- Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation ProcessesPhysical Review B, 1961
- Piezoresistance of-Type GermaniumPhysical Review B, 1959
- Observation by Cyclotron Resonance of the Effect of Strain on Germanium and SiliconProceedings of the Physical Society, 1958
- An apparatus for measuring the piezoresistivity of semiconductorsJournal of Research of the National Bureau of Standards, 1957
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957