Electron beam-induced absorption modulation imaging of strained In0.2Ga0.8As/GaAs multiple quantum wells
- 19 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (3), 394-396
- https://doi.org/10.1063/1.110783
Abstract
We have examined the effects of electron‐hole plasma generation on excitonic absorption phenomena in nipi‐doped In0.2Ga0.8As/GaAs multiple quantum wells (MQWs) using a novel technique called electron beam‐induced absorption modulation imaging. The electron‐hole plasma is generated by a high‐energy electron beam in a scanning electron microscope and is used as a probe to study the MQW absorption modulation. The influence of structural defects on the diffusive transport of carriers is imaged with a μm‐scale resolution.Keywords
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