Application Of Optical Microscopy To Dimensional Measurements In Microelectronics

Abstract

The problems of making accurate measurements of critical dimensions of features on integrated photomasks and silicon wafers are discussed and the currently employed optical measurement techniques described. Sources of systematic uncertainty in such measurements are considered. Measurement equipment developed at NPL and the NPL Photomask Linewidth Standard are described, and approaches to profile measurement of features on silicon wafers are discussed.© (1983) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.