Characteristics of polarity-controlled ZnO films fabricated using the homoepitaxy technique
- 1 September 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 22 (5), 2454-2461
- https://doi.org/10.1116/1.1792237
Abstract
No abstract availableThis publication has 36 references indexed in Scilit:
- Role of Ga for Co-doping of Ga with N in ZnO FilmsJapanese Journal of Applied Physics, 2003
- Influence of Codoping with Ga on the Electrical and Optical Properties of N-Doped ZnO FilmsJournal of the Electrochemical Society, 2003
- Structural and optical properties of epitaxial and bulk ZnOApplied Physics Letters, 2002
- Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting DiodeJapanese Journal of Applied Physics, 2001
- Plastic Ball Grid Array Reflow Using a Fast-Modulated CW LaserJapanese Journal of Applied Physics, 2001
- Homoepitaxial growth mechanism of ZnO(0001): Molecular-dynamics simulationsPhysical Review B, 2000
- Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)Journal of Crystal Growth, 1999
- Atomic diffusion-induced deep levels near ZnSe/GaAs(100) interfacesApplied Physics Letters, 1995
- Crystallographic Polarity of ZnO CrystalsJournal of Applied Physics, 1963
- Crystallographic Polarity in the II-VI CompoundsJournal of Applied Physics, 1962