Structure and galvanomagnetic properties of two-phase recrystallised InSb-In layers
- 1 May 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (5), 467-468
- https://doi.org/10.1016/0038-1101(65)90021-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Some galvanomagnetic and optical properties of Cu doped InSb filmsSolid-State Electronics, 1964
- The dendritic growth of InSbJournal of Physics and Chemistry of Solids, 1963
- Annealing Effects in Evaporated InSb FilmsJournal of Applied Physics, 1962
- Growth of semiconducting compounds from non-stoichiometric meltsSolid-State Electronics, 1961
- New Emission Continuum of Helium in the Vacuum Ultraviolet RegionJournal of the Optical Society of America, 1961
- Properties of p-type Indium Antimonide: I. Electrical PropertiesProceedings of the Physical Society, 1958
- THE EFFECT OF GROWTH CONDITIONS UPON THE SOLIDIFICATION OF A BINARY ALLOYCanadian Journal of Physics, 1956
- Analysis of Magnetoresistance and Hall Coefficient in-Type Indium-Antimonide and-Type GermaniumPhysical Review B, 1954
- Note on the Hall Potential Across an Inhomogeneous ConductorPhysical Review B, 1950
- Improved Method for Measuring Hall CoefficientsReview of Scientific Instruments, 1948