Investigation of Au-Ni ohmic contacts on n-type GaP
- 11 June 1973
- journal article
- letter
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 6 (9), L95-L97
- https://doi.org/10.1088/0022-3727/6/9/101
Abstract
A study of the current and temperature dependence of Au-Ni contacts on n-type GaP has been performed. From the data obtained the value of the activation energy was calculated as 0033 eV. In addition, the optimum technological conditions (550°C, 2 min) of contact formation were also estimated from the measurements of the specific contact resistance as a function of alloying temperature.Keywords
This publication has 6 references indexed in Scilit:
- Contact resistances of AuGeNi, AuZn and Al to III–V compoundsSolid-State Electronics, 1972
- Effective chemical polishing of n-type GaP surfacesPhysica Status Solidi (a), 1972
- On the study of metal—Semiconductor contactsIEEE Transactions on Electron Devices, 1972
- Improved ohmic contacts to n-type GaP devicesSolid-State Electronics, 1971
- Effects of temperature on contact resistance of Gunn diodesElectronics Letters, 1969
- Vapor Growth of GaP on GaAs SubstratesJournal of Applied Physics, 1965