A pinhole model for metal-insulator-semiconductor solar cells
- 30 November 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (11), 1067-1070
- https://doi.org/10.1016/0038-1101(81)90136-2
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Theory of metal-insulator-semiconductor solar cellsJournal of Applied Physics, 1977
- Outline and comparison of the possible effects present in a metal–thin–film–insulator–semiconductorJournal of Applied Physics, 1976
- Open-circuit voltage of MIS silicon solar cellsJournal of Applied Physics, 1976
- Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cellsApplied Physics Letters, 1976
- An Al p-silicon MOS photovoltaic cellJournal of Applied Physics, 1975
- A 15% efficient antireflection-coated metal-oxide-semiconductor solar cellApplied Physics Letters, 1975
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- An 8% efficient layered Schottky-barrier solar cellJournal of Applied Physics, 1974
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. ExperimentSolid-State Electronics, 1974
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971