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A New MOS Process Using MoSi
2
as a Gate Material
Home
Publications
A New MOS Process Using MoSi
2
as a Gate Material
A New MOS Process Using MoSi
2
as a Gate Material
TM
Tohru Mochizuki
Tohru Mochizuki
KS
Kenji Shibata
Kenji Shibata
TI
Tomoyasu Inoue
Tomoyasu Inoue
KO
Kazunori Ohuchi
Kazunori Ohuchi
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1 January 1978
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 17
(S1)
https://doi.org/10.7567/jjaps.17s1.37
Abstract
No abstract available
Cited by 56 articles