Prospects for atomically ordered device structures based on STM lithography
- 1 July 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (7-8), 1061-1067
- https://doi.org/10.1016/s0038-1101(97)00302-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Al Nucleation on Monohydride and Bare Si(001) Surfaces: Atomic Scale PatterningPhysical Review Letters, 1997
- Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) SurfaceJapanese Journal of Applied Physics, 1996
- Experimental investigation of a PtSi source and drain field emission transistorApplied Physics Letters, 1995
- Atomic-Scale Desorption Through Electronic and Vibrational Excitation MechanismsScience, 1995
- Nanoscale oxide patterns on Si(100) surfacesApplied Physics Letters, 1995
- Silicon field-effect transistor based on quantum tunnelingApplied Physics Letters, 1994
- An Atomically Resolved STM Study of the Interaction of Phosphine with the Silicon(001) SurfaceThe Journal of Physical Chemistry, 1994
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Band structure of impurity-sheet-doped superlattice alloysJournal of Vacuum Science and Technology, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982