Simple model of multiple charge states of transition-metal impurities in semiconductors
- 15 March 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 13 (6), 2553-2559
- https://doi.org/10.1103/physrevb.13.2553
Abstract
The Anderson model for magnetic impurities in metals is extended to semiconductors. It is shown how self-consistent Hartree-Fock solutions can exist in the gap for many different charge states of the impurity, providing the matrix elements coupling the impurity and substrate are large enough.Keywords
This publication has 2 references indexed in Scilit:
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Localized Magnetic States in MetalsPhysical Review B, 1961