Nonlinear electrical transport in porous silicon
- 15 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (4), 2981-2984
- https://doi.org/10.1103/physrevb.49.2981
Abstract
We present a study of the electrical transport in porous Si layers prepared by anodic etching of two different kinds of (100) p-type Si substrates. It is shown that by choosing a sufficiently thick layer, the problem of injection from the contacts can be eliminated. In this way we measure the intrinsic transport properties. The results suggest that a Poole-Frenkel type of mechanism accounts for the observed electric-field-enhanced conduction.Keywords
This publication has 12 references indexed in Scilit:
- Spin-dependent effects in porous siliconApplied Physics Letters, 1992
- Luminescence cycling and defect density measurements in porous silicon: Evidence for hydride based modelApplied Physics Letters, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Investigations of the Electrical Properties of Porous SiliconJournal of the Electrochemical Society, 1991
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938